P307 Datasheet (PDF)
0.1. irfp3077pbf.pdf Size:299K _international_rectifier
PD — 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d
0.2. bup307d.pdf Size:342K _siemens
BUP 307DIGBT With Antiparallel DiodePreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diodePin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 307D 1200V 35A TO-218 AB Q67040-A4221-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-ga
0.3. bup307.pdf Size:343K _siemens
BUP 307IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 307 1200V 35A TO-218 AB Q67078-A4201-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-
0.4. irfp3077pbf.pdf Size:299K _infineon
PD — 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d
0.5. kp307 2p307.pdf Size:1165K _russia
0.6. p307-v p308 p309.pdf Size:747K _russia
0.7. irfp3077.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP3077IIRFP3077FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc
Биполярный транзистор P307 — описание производителя. Основные параметры. Даташиты.
Наименование производителя: P307
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3
V
Макcимальный постоянный ток коллектора (Ic): 0.12
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 20
MHz
Статический коэффициент передачи тока (hfe): 20
P307
Datasheet (PDF)
0.1. irfp3077pbf.pdf Size:299K _international_rectifier
PD — 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d
0.2. bup307d.pdf Size:342K _siemens
BUP 307DIGBT With Antiparallel DiodePreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diodePin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 307D 1200V 35A TO-218 AB Q67040-A4221-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-ga
0.3. bup307.pdf Size:343K _siemens
BUP 307IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 307 1200V 35A TO-218 AB Q67078-A4201-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-
0.4. irfp3077pbf.pdf Size:299K _infineon
PD — 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d
0.5. kp307 2p307.pdf Size:1165K _russia
0.6. p307-v p308 p309.pdf Size:747K _russia
0.7. irfp3077.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP3077IIRFP3077FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switc
Другие транзисторы… P29A
, P30
, P302
, P303
, P303A
, P304
, P306
, P306A
, B647
, P307A
, P307B
, P307G
, P307V
, P308
, P309
, P401
, P402
.
