P306 - параметры, поиск аналогов, даташиты транзистора

P306 Datasheet (PDF)

0.1. tp3069re.pdf Size:144K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3069/DThe RF LineRF Power TransistorTP3069The TP3069 is designed for cellular radio base station amplifiers up to 960MHz. I

0.2. tp3061re.pdf Size:118K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3061/DThe RF LineUHF Power TransistorTP3061The TP3061 is designed for 960 MHz mobile base stations in both analog anddigita

0.3. bup306d.pdf Size:221K _siemens

BUP 306DIGBT With Antiparallel DiodePreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diodePin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 306D 1200V 23A TO-218 AB Q67040-A4222-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-ga

0.4. dmp3065lvt.pdf Size:354K _diodes

DMP3065LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 42m @ VGS = -10V -5.1A -30V ESD Protected Gate 65m @ VGS = -4.5V -4.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

0.5. dmp3068l.pdf Size:342K _diodes

DMP3068L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance V(BR)DS ID max Low Gate Threshold Voltage RDS(ON) max Package TA = +25C S Low Input Capacitance Fast Switching Speed -3.9A 72m @ VGS = -10V Low Input/Output Leakage -30V SOT-23 85m @ VGS = -4.5V -3.6A Totally Lead-Free & Fully RoHS Compliant (

0.6. p302 p303a p304 p306a.pdf Size:941K _russia

0.7. kp306 2p306.pdf Size:1044K _russia

0.8. cep3060 ceb3060.pdf Size:408K _cet

CEP3060/CEB3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25

Биполярный транзистор P306 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: P306

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 5
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимальный постоянный ток коллектора (Ic): 0.4
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 0.1
MHz

Статический коэффициент передачи тока (hfe): 7

P306
Datasheet (PDF)